Semiconductor laser
文献类型：专利
| 作者 | ARIMOTO SATOSHI; AOYANAGI TOSHITAKA |
| 发表日期 | 1991-05-30 |
| 专利号 | JP1991127891A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the realization of a good SBA structure by a method wherein a filling-up clad layer is constituted of an AlGaAs first clad layer, which is formed on a current blocking layer and on a striped groove, and an AlGaInP second clad layer, which is formed on the first clad layer and is sufficiently thin to the extent that defective growth does not occur. CONSTITUTION:A buried clad layer is formed of a clad layer of a two-layer structure which is constituted of an AlGaAs first clad layer 13 and an AlGaAs second clad layer 10'. Accordingly, by performing an growth for filling up a groove 8 using the layer 13 which mainly consists of AlGaInP, the thickness of the layer 10' consisting of AlGaInP can be reduced. Thereby, the occurrence of defective growth in the groove can be prevented and a good SBA (Self- Aligned Structure lasen with bent active layer) structure can be realized using an AlGaInP material. |
| 公开日期 | 1991-05-30 |
| 申请日期 | 1989-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ARIMOTO SATOSHI,AOYANAGI TOSHITAKA. Semiconductor laser. JP1991127891A. 1991-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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