Semiconductor laser element
文献类型：专利
| 作者 | UMEDA JIYUNICHI; SHIMADA JIYUICHI; NAKAMURA MICHIHARU; KATAYAMA YOSHIFUMI; KAJIMURA TAKASHI; YAMASHITA SHIGEO |
| 发表日期 | 1983-09-16 |
| 专利号 | JP1983155789A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To increase an optical output limit largely by forming a coating film using an amorphous silicon film as one of its constitutional materials. CONSTITUTION:The titled element is a semiconductor laser one having double- hetero structure, and a positive electrode 1, a P type Ga1-xAlxAs crystalline layer 2, an N type or P type Ga1-yAlyAs crystalline layer 3 as an active layer and an N type Ga1-sAls crystalline layer 4 are formed to the element. Laser lights emitted from the active layer 3 interfere in reflected light from the interface between an amorphous film 6 and air, and changed into th nodes of standing waves in the interface between the active layer 3 and the film 6, and luminous intendity reduces remarkably. When a refractive index of the film is defined as n, luminous field intensity in the interface reaches 1/n as compared to the condition when there is no film and when film thickness is lambda/2. Accordingly, the optical output limit can be increased largely while minimizing the rise of the threshold current value of the semiconductor laser element. |
| 公开日期 | 1983-09-16 |
| 申请日期 | 1983-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79394]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | UMEDA JIYUNICHI,SHIMADA JIYUICHI,NAKAMURA MICHIHARU,et al. Semiconductor laser element. JP1983155789A. 1983-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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