Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | NAKA HIROSHI |
| 发表日期 | 1990-03-19 |
| 专利号 | JP1990078289A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To enable the reduction of a threshold value by a method wherein a mesa section provided with a constricted part is provided, an n-type buried layer is prevented from touching an active layer and an n-type clad layer, and a leakage current is prevented. CONSTITUTION:A stripe like mesa section 22 is provided onto the primary face of a p-type semiconductor substrate 20, and a buried multilayer growth layer 21 is formed on both the sides of the mesa section 22. The lowest layer of the mesa section 22 is formed of a p-type clad layer 26, and an active layer 27, an n-type clad layer 28, and a cap layer 29 are successively laminated thereon. And, a p-type buried layer 33 and the cap layer 29 are successively laminated to form the buried multilayer growth layer 21 whose lowest layer is formed of an n-type buried layer. And, the active layer 27 is located at a position higher than the constricted part of the mesa section 22, and the lower part of the mesa section 22 is made to grow vertical. The mesa section 22 is constituted in such a structure that a buried layer 31 is prevented from being in contact with the active layer 27 and also with the clad layer the formation of it. By this setup, n-type layers small in resistivity are prevented from being in contact with each other and a leakage current is made to decrease, so that a semiconductor laser element 19 of small threshold value can be obtained. |
| 公开日期 | 1990-03-19 |
| 申请日期 | 1988-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKA HIROSHI. Semiconductor laser element and manufacture thereof. JP1990078289A. 1990-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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