半導体レーザ
文献类型：专利
| 作者 | 日向 進; 生和 義人 |
| 发表日期 | 1996-01-17 |
| 专利号 | JP1996004187B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To oscillate in a fundamental supermode where a far field pattern becomes a simple-hump shape and a radiated beam of good quality can be obtained by a method wherein waveguides of a large width and a small width are installed alternately and a fundamental mode gain out of supermodes is set to be larger than other higher-order gains. CONSTITUTION:Out of five-gang waveguides composed of five-gang stripe grooves formed by etching a semiconductor layer 2, a width value w2 of waveguides 8 of a small width which are formed alternately with waveguides of a large width is 2mum if a width value w1 of the wider stripe grooves is 3mum, a difference value DELTAn between an equivalent refractive index in a stripe- groove region and the equivalent refractive index in a region between the stripe grooves is 0.0034, an interval value (d) between the stripe grooves is 2mum and an oscillation wavelength value is 0.81mum. By this setup, a relative mode gain in a fundamental supermode of this array-type semiconductor laser is largest. Because the mode gain in the fundamental supermode is larger than that in other higher-order modes, this laser is oscillated in the fundamental supermode. |
| 公开日期 | 1996-01-17 |
| 申请日期 | 1988-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79402]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 日向 進,生和 義人. 半導体レーザ. JP1996004187B2. 1996-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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