Distributed feedback semiconductor laser
文献类型：专利
| 作者 | NISHIDA TOSHIO; FUKUDA MITSUO; TAMAMURA TOSHIAKI |
| 发表日期 | 1991-05-10 |
| 专利号 | JP1991110885A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To intensify a confinement, to reduce an oscillation threshold value and to obtain a narrow spectral line width by means of a comparatively short resonator by a method wherein a coupling coefficient kappa of a diffraction grating installed in a resonator is endowed with a distribution and a region whose coupling coefficient kappais high is formed especially at one end of a resonator waveguide. CONSTITUTION:An active layer 2 and, in succession, a guide (light waveguide) layer 3 are formed on a substrate 1; in addition, a diffraction-grating resist pattern is formed on the substrate by using a resist 20. The resist pattern is arranged in such a way that lines are thin and a space is wide in a region 12' at one end and that a space is thin and lines are thick in the other region 11'. As a result, since a change in a shape is large in the region 12' at the one-end part of the diffraction grating, a coupling coefficient becomes large; the coupling coefficient becomes small in the other region 11'. When a phase-adjusting region 16 is formed near a boundary between a high-kappa region 12 and a low-kappa region 11, a phase of the diffraction grating can be controlled. Thereby, a confinement is intensified, an oscillation threshold value is reduced and it is possible to obtain a narrow spectral line width by means of a comparatively short resonator. |
| 公开日期 | 1991-05-10 |
| 申请日期 | 1989-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NISHIDA TOSHIO,FUKUDA MITSUO,TAMAMURA TOSHIAKI. Distributed feedback semiconductor laser. JP1991110885A. 1991-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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