Semiconductor laser device
文献类型：专利
| 作者 | YOSHIHARA KAZUHIRO; TSUNEKANE MASAKI |
| 发表日期 | 1989-09-22 |
| 专利号 | JP1989238185A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To independently detect individual optical outputs with a low crosstalk, and to obtain a semiconductor laser which obtains stable output light by propagating light emitted from a plurality of light emitting points in different waveguides, and detecting them by different photodetectors formed in the waveguides. CONSTITUTION:A semiconductor laser 1 having a plurality of light emitting points 1a, 1b, 1c is fusion-bonded on a heat sink 3, and a board 2 having a groove is provided immediately after the edge face of the laser A waveguide 5 is formed of a tunnel-like part formed of the protrusion of the board 2 and the sink 3. A photodetector 4 is fusion-bonded with a photodiode on the sink in the waveguide 5. In this case, the edge face of the laser 1 and the incident edge face of the board 2 are approached to suppress the diffraction of the light from other light emitting point. Thus, individual light outputs can be detected independently with low crosstalk. |
| 公开日期 | 1989-09-22 |
| 申请日期 | 1988-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79420]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YOSHIHARA KAZUHIRO,TSUNEKANE MASAKI. Semiconductor laser device. JP1989238185A. 1989-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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