Liquid phase epitaxial growth method
文献类型：专利
| 作者 | NAKAI SABUROU; UMEO ITSUO |
| 发表日期 | 1984-07-18 |
| 专利号 | JP1984124713A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth method |
| 英文摘要 | PURPOSE:To obtain a liquid phase epitaxial growth method which is capable of forming a growth layer in the uniform thickness on a substrate by previously forming a layer consisting of metal having a low melting point and a high terminal conductivity on the rear surface of substrate. CONSTITUTION:A layer 2 consisting of indium, for example, having a melting point of about 157 deg.C is formed at the rear surface of substrate 1 made of the N type indium. A substrate 1 is placed on a boat for growth. A growth apparatus as a whole, where solute of growth solution is reserved in the reservoir together with solvent, is pre-procesed. When a cooling temprature becomes 660 deg.C, the slider A is slid toward direction A. Thereby, the growth solution 31 for first layer is placed in contact with the surface of substrate When the temperature reaches 650 deg.C, the growth solution 32 for second layer, when the temperature is lowered to 645 deg.C, the growth solution 33 for third layer are respectively placed in contact with the surface of substrate. When the temperature is lowered to 640 deg.C, growth of third layer comes to the end. In this process, the indium layer 2 fuses quickly and the solution is distributed from corner to corner without generating gap between the rear surface of substrate and the bottom part 12 of recessed part. Thereby, an epitaxial layer in the equal thickness can be formed. |
| 公开日期 | 1984-07-18 |
| 申请日期 | 1982-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79426]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NAKAI SABUROU,UMEO ITSUO. Liquid phase epitaxial growth method. JP1984124713A. 1984-07-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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