半導体発光装置
文献类型：专利
| 作者 | 菅原 充 |
| 发表日期 | 1994-11-30 |
| 专利号 | JP1994097708B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To enable a semiconductor laser device to have stable laser oscillation, by providing linear impurity regions parallel to each other and having a type of conductivity opposite to that of a semiconductor layer and of high-resistance buried layers, and further providing linear electrodes parallel to each other so as to be formed on said linear impurity regions and to be contacted therewith. CONSTITUTION:An N-type InGaAsP active layer 8 and an N-type InP clad layer 9 are grown in that order on an N type InP substrate 7. An insulation film of SiO2 is formed and provided with an aperture. Using this insulation film having the aperture as a mask, the structure is etched to form grooves 10 reaching the N type InP substrate 10. N type InP high-resistance layers 10A are buried within the grooves 10 by employing the VPE process. The insulation film of SiO2 used as the mask is removed. An N-type InP layer 11 and another insulation film of SiO2 are formed. The insulation film is patterned to form linear apertures parallel to each other. Be ions are implanted with the insulation film used as a mask to form P type impurity regions 12. P-side electrodes 13 and an N-side electrode 14 are further formed. A semiconductor laser device produced in this manner is allowed to have stable laser oscillation. |
| 公开日期 | 1994-11-30 |
| 申请日期 | 1986-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79428]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 菅原 充. 半導体発光装置. JP1994097708B2. 1994-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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