中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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文献类型:专利

作者MUSHIGAMI MASAHITO; TANAKA HARUO; FUKADA HAYAMIZU
发表日期1989-08-09
专利号JP1989037870B2
著作权人ROHM KK
国家日本
文献子类授权发明
其他题名-
英文摘要PURPOSE:To obtain the title device excellent in electric properties and optical properties regardless of the value of the Al composition of the first upper clas layer, by a method wherein a protection layer made of AlGaAs with an Al composition set at less than a specific value is prepared during the first growing precess in the manufacture of AlGaAs series semiconductor lasers produced by an MBE device. CONSTITUTION:During the first growing process, the protection layer 24 made of AlxGa1-xAs with an Al composition set at X<0.4 is interposed between the first upper clad layer 23 and a light absorption layer 25. This allow the first upper clad layer 23 to have passivation effect in the presence of this protection layer 24. Further, the process of thermal cleaning can produce a clear surface because of the Al composition of the protection layer 24 set at 0.4 or less. Therefore, the value of the Al composition of the first upper clad layer 23 can be arbitrarily selected; consequently, the light confining effect can be improved, and the improvement in lamination of the second grown layer 40 becomes enabled. Since the protection layer 24 can be grown by an MBE device in continuity to the other layers, a special growing process is not needed.
公开日期1989-08-09
申请日期1984-08-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/79430]  
专题半导体激光器专利数据库
作者单位ROHM KK
推荐引用方式
GB/T 7714
MUSHIGAMI MASAHITO,TANAKA HARUO,FUKADA HAYAMIZU. -. JP1989037870B2. 1989-08-09.

入库方式: OAI收割

来源:西安光学精密机械研究所

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