Semiconductor laser
文献类型：专利
| 作者 | NAMISAKI HIROBUMI |
| 发表日期 | 1989-07-20 |
| 专利号 | JP1989183191A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce an operation current and to simply form electrodes by narrowing an interval between impurity diffused regions at an active layer position to be diffused with the impurity near an active layer as compared with the width of a clad layer of an electrode forming side. CONSTITUTION:A p-type impurity of Zn, Be or the like is implanted by an ion implanting method to a surface including a MQW active layer 1 of a region etched at both sides for holding a stripe, thereby forming an ion implanted region 60. Then, a mask 50 is removed, the implanted impurity is diffused and moved by heat treating so that the interval between the diffused parts becomes 2mum or less at the layer In this case, the thickness of an n-type AlGaAs clad layer 2 is sufficiently increased to eliminate the influence of the diffused part to an n-type GaAs contact layer 20, and a p-type electrode 100 and an n-type electrode 101 are eventually formed. Thus, the threshold value of an operation current can be reduced, and a laser having a stable oscillation mode is obtained. |
| 公开日期 | 1989-07-20 |
| 申请日期 | 1988-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79440]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI. Semiconductor laser. JP1989183191A. 1989-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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