Semiconductor laser
文献类型：专利
| 作者 | TADA KENTARO; HOTTA HITOSHI; KAWADA SEIJI |
| 发表日期 | 1992-04-08 |
| 专利号 | JP1992106991A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To increase an external differentiated quantum efficiency and to improve yield by providing a p-type Al1-xGaxP (0<=x<=1) etching stopper layer having larger energy gap than that of an active layer and inhibiting to absorb a light from the active layer at the upper side of an inner clad layer. CONSTITUTION:A lattice constant is matched, and an n-type clad layer 2, an active layer 3, a p-type inner clad layer 4, a p-type etching stopper layer 5, a p-type outer clad layer 6, a p-type buffer layer 7 and a p-type cap layer 8 are sequentially formed on an n-type GaAs substrate. An SiO2 mask 11 is used, and the layer 8 is etched in a mesa state to the upper boundary of the layer 5. Then, the layer 8 is sidewisely etched. Then, second growth is conducted to form a block layer 9. After the mask 11 is removed, a contact layer 10 is formed. Both p-type and n-type electrodes are formed on the layer 10, the substrate, cleaved, and separated into individual chips to complete a semiconductor laser. |
| 公开日期 | 1992-04-08 |
| 申请日期 | 1990-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79448]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TADA KENTARO,HOTTA HITOSHI,KAWADA SEIJI. Semiconductor laser. JP1992106991A. 1992-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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