半導体レ-ザ
文献类型：专利
| 作者 | 北村 光弘 |
| 发表日期 | 1996-10-24 |
| 专利号 | JP2570732B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To obtain excellent laser characteristics by forming a waveguide layer including a region having a potential energy section in which irregularities, in which the crests (troughs) of valence bands correspond to the crests (troughs) of conduction bands, alternately repeat. CONSTITUTION:An active layer 1 is held by waveguide layers 2 having energy gaps larger than the active layer 1, and clad layers 5 are formed outside the waveguide layers 2. The waveguide layers 2 contain regions having potential energy distribution in which irregularities, in which the crests (troughs) of valence bands correspond to the crests (troughs) of conduction bands, alternately repeat. Consequently, the lifetime of carriers in the waveguide layers 1 is lengthened, radiative recombination in the waveguide layers 2 is inhibited, and injected carriers excellently radiative-recombine in the quantum well active layer Accordingly, excellent characteristics such as a low threshold, narrow oscillation spectral band width, etc., are acquired. |
| 公开日期 | 1997-01-16 |
| 申请日期 | 1987-04-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 北村 光弘. 半導体レ-ザ. JP2570732B2. 1996-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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