半導体レーザ装置
文献类型：专利
| 作者 | 松井 康; 宇野 智昭; 石野 正人 |
| 发表日期 | 1997-08-08 |
| 专利号 | JP2681909B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To modulate an output from laser beams without changing injecting currents, and to obtain oscillating beams at a stable mode by electrically controlling a degree in which laser beams are coupled with an optical waveguide section adjacently arranged to a semiconductor laser section. CONSTITUTION:An InGaAsP optical waveguide layer 12, N-InP 13, an InGaAsP active layer 21 and a P-InP clad 14 are superposed on an N-InP substrate 11, a P-InP loading section is formed, and ohmic electrodes 16, 17 are attached. The active layer 21 and the clad layer 14 are buried to P-InP 19 and N-InP 20. Currents are injected from the electrode 16, beams emitted from the active layer 21 are laser-oscillated while crossing the waveguide layer 12, and there is a laser output even under the loading section 15 by distribution coupling. When constant currents are flowed through a laser section and the refractive index of a waveguide is changed by an electro-optic effect by utilizing a P-N junction under the loading section 15, coupling with the laser section varies, and an optical output from the laser section largely alters, thus acquiring oscillating beams at a mode more stable than normal direct modulation. |
| 公开日期 | 1997-11-26 |
| 申请日期 | 1984-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79457]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 松井 康,宇野 智昭,石野 正人. 半導体レーザ装置. JP2681909B2. 1997-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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