Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI; RA TAKESHI; INOUE TAKESHI; HOSOMATSU HARUO; IWAOKA HIDETO |
| 发表日期 | 1991-02-14 |
| 专利号 | JP1991034489A |
| 著作权人 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To form a diffraction grating in an active layer and to obtain a longitudinal mode oscillation of a single wavelength by so growing an active layer as to further fill up a recess with a thin buffer layer on the surface of a semiconductor layer engraved with an uneven part. CONSTITUTION:A special semiconductor layer 4 is provided on a clad layer 3, and an uneven part corresponding to a diffraction grating is engraved thereon. A buffer layer 6 is grown by an organic metal vapor growing method on the uneven part while conserving the shape of the grating. Further, an active layer 7 is so grown as to bury the recess of the uneven part. Thus, the grating can be formed on the lower surface of the layer 7. Even if the grating is formed on the active layer by the above method, no defect occurs in a semiconductor crystal structure, an oscillation mode is stable without 2-mode oscillation, and its structure and manufacturing steps are simple. |
| 公开日期 | 1991-02-14 |
| 申请日期 | 1989-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79460]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI,RA TAKESHI,et al. Semiconductor laser and manufacture thereof. JP1991034489A. 1991-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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