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文献类型：专利
| 作者 | KISHI YUTAKA |
| 发表日期 | 1987-02-10 |
| 专利号 | JP1987006336B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To grow the mixed crystal layer containing Ga, Al, Sb and As by five element solution dissolved with InAs crystal in Ga-Al-Sb three element solution. CONSTITUTION:A carbon boat 1 has two hollows with a GaSb substrate 2 contained in one side and InAs crystal 3 in the other side with Ga, Al, Sb corresponding to Ga-Al-Sb solution contained in the hole of a slider 4. Then, in a specific atmosphere, Ga-Al-Sb solution 5 is slid onto the InAs crystal 3 which is dissolved in the Ga-Al-Sb solution 5 to form Ga-Al-In-As-Sb fine element solution. Next, this solution is slid into the middle of the hollow and cooled later to be slid onto the GaSb substrate 2 for epitaxial growth. Thus, Ga-Al-As-Sb layer available for lattice alignment with a GaSb substrate, etc. can be grown. |
| 公开日期 | 1987-02-10 |
| 申请日期 | 1981-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79464]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KISHI YUTAKA. -. JP1987006336B2. 1987-02-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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