Semiconductor light emitting device
文献类型：专利
| 作者 | AKITA KENZOU |
| 发表日期 | 1985-11-01 |
| 专利号 | JP1985218892A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To simplify processes and to decrease the threshold value in oscillation, by providing a current narrowing part comprising an N-P junction in a crystal at a step of epitaxial crystal growth. CONSTITUTION:On the (100) surface of a P type InP substrate, an N type InGa AsP layer 9, in which Te is added as impurities, is grown. Then, an SiO2 layer is formed on the N type InGaAsP layer 9. Thereafter a hole is provided by a photoetching technology. The N type InGaAsP layer 9 is etched, and a narrow part 10 is formed. Then a P type InP clad layer 11 in which cadmium Cd is added, a Zn added InGaAsP active layer 12, a Te added N type InP clad layer 13 and Te added N type InGaAsP layer 14 are sequentially provided so as to form an epitaxial crystal. An Au.Sn electrode 8 is provided on the N side of the crystal. An Au.Zn electrode 15 is provided on the P side, i.e., the lower side except light taking-out position. The light is taken out of the P type InP substrate In this constitution, the current passes only the narrow part 10 of the light emitting diode. Therefore the current density is increased. The diode is operated by the lower current in comparison with the conventional device. The diameter of the emitted light can be adjusted by the diameter of the narrow part 10. |
| 公开日期 | 1985-11-01 |
| 申请日期 | 1984-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79490]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | AKITA KENZOU. Semiconductor light emitting device. JP1985218892A. 1985-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。