Semiconductor laser device
文献类型：专利
| 作者 | WADA HIROSHI; HORIKAWA HIDEAKI; MATSUI YASUHIRO |
| 发表日期 | 1990-09-28 |
| 专利号 | JP1990244690A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the recombination of holes with electrons and to obtain a laser device excellent in high speed modulation property by a method wherein an n-type layer is provided between a current constriction layer and a p-type layer in contact with it. CONSTITUTION:A waveguide layer 31 and an active layer 33 both of GaInAsP are provided on to a p-InP substrate 2, and an n-InP clad layer 35 and an n- GaInAsP cap 37 are laminated thereon through an epitaxial growth method. An SiO2 mask 45 is provided, and the substrate 27 is etched using a mixed solution of hydrochloric acid and nitric acid in the ratio 1:2 to form a double hetero-structure 29, whose side face is made vertical to the substrate 27. In succession, an n-InP hole diffusion block layer 47 and an Fe doped InP current constriction layer 39 are vapor-grown on both the sides of a mesa to make the surface flat. The mask 45 is removed, an SiO2 film 45 is formed on the current constriction layer 39, an n-side electrode 41a of Au-Ge-Ni alloy and a p-side electrode of 41b Au-Zn alloy are provided, and thus a semiconductor laser device is completed. A hole diffusion block layer being provided, the recombination of electrons with holes is prevented, a leakage current is reduced, and an optical output is prevented from deteriorating. |
| 公开日期 | 1990-09-28 |
| 申请日期 | 1989-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,HORIKAWA HIDEAKI,MATSUI YASUHIRO. Semiconductor laser device. JP1990244690A. 1990-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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