Semiconductor laser
文献类型：专利
| 作者 | UCHIDA KENJI; NAKATSUKA SHINICHI; YAMASHITA SHIGEO; KAJIMURA TAKASHI |
| 发表日期 | 1992-10-14 |
| 专利号 | JP1992290280A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enhance an output by providing a light enlarging layer having a refractive index larger than that of a clad layer and smaller than that of an active layer in the clad layer. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type AlGaAs clad layer 31, an n-type AlGaAs light enlarging layer 4, an n-type AlGaAs clad layer 32, an undoped quantum well active layer 5, a p-type AlGaAs clad layer 6 and a p-type GaAs layer 7 are sequentially crystalline grown on an n-type GaAs substrate Thereafter, a stripelike upper SiO2 dielectric film is formed by a photolithography and a CVD, the p-type clad layer is etched to form a ridge. Then, an n-type GaAs block layer 8 and a p-type GaAs buried layer 9 are selectively grown, a Cr-Au electrode 10 is deposited on the crystalline surface, an AuGeNi-Cr-Au electrode is deposited on a rear surface, cleaved and scribed. Thus, an optical breakdown output limit of an end face of a laser is improved, and output is enhanced. |
| 公开日期 | 1992-10-14 |
| 申请日期 | 1991-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79496]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UCHIDA KENJI,NAKATSUKA SHINICHI,YAMASHITA SHIGEO,et al. Semiconductor laser. JP1992290280A. 1992-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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