Semiconductor laser device
文献类型：专利
| 作者 | YAGI, TETSUYA; YOSHIDA, YASUAKI |
| 发表日期 | 2004-07-20 |
| 专利号 | US6765944 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a stacked structure. The stacked structure includes a first electrode, a substrate of a first conductivity type on the first electrode, a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type opposite the first conductivity type, an insulating layer, and a second electrode. The second cladding layer includes at least first and second portions having thickness different from each other. The first portion is thicker than the second portion. The insulating layer is deposited on the second cladding layer but not on the first portion. The second electrode is electrically connected to the first portion. A product of a reciprocal of layer thickness and heat conductivity of the insulating layer is smaller than 4x10W/(mK). |
| 公开日期 | 2004-07-20 |
| 申请日期 | 2002-12-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YAGI, TETSUYA,YOSHIDA, YASUAKI. Semiconductor laser device. US6765944. 2004-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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