Manufacture of semiconductor device
文献类型：专利
| 作者 | SHIGE NORIYUKI |
| 发表日期 | 1984-12-10 |
| 专利号 | JP1984218725A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To contrive prevention of lateral spike diffusion, stabilization of element characteristics and to achieve a long lifetime of an element by a method wherein, after an epitaxial layer has been selectively removed, and a mask layer has been formed by performing a lithographic method, impurities are selectively diffused using said mask layer. CONSTITUTION:An n type clad layer 3 consisting of n type GaAlAs, an active layer 4 consisting of GaAs, a p type clad layer 5 consisting of p type GaAlAs, a cap layer 6 consisting of n type GaAs, and a screen layer 11 consisting of Ga1-xAlxAs (x>=0.4) are formed successively. The screen layer 11 is partially removed, and a mask layer 12 with which the cap layer part opposing to the channel 2 will be exposed is formed. When Zn is diffused on the whole main surface of a wafer 10, a contact region 7 with which ohmic contact will be obtained is formed. An anode electrode 8 is formed on the whole main surface of the wafer 10, and a cathode electrode 9 is formed on the lower surface of the wafer 10. After a cleavage has been formed on the wafer 10 along the plane of cleavage orthogonally intersecting with the channel 2 by applying external force, an element is obtained by cutting the wafer at the intermediate part of a channel 2 and another channel 2. |
| 公开日期 | 1984-12-10 |
| 申请日期 | 1983-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79506]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI. Manufacture of semiconductor device. JP1984218725A. 1984-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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