Semiconductor laser
文献类型：专利
| 作者 | KAKIMOTO SHOICHI |
| 发表日期 | 1989-09-13 |
| 专利号 | JP1989230282A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the cost of a semiconductor laser for high-output operations, by making a P-type diffusion region into a light guide region and a light amplifying region as well by one-time sealing. CONSTITUTION:The central part of a GaAs contact layer 7 being the surface layer is removed in a groove shape, until it reaches the next layer, an N-type AlyGa1-yAs clad layer 6. A P-type diffusion region 8 is formed in structure like stripes, at a portion excluding both the ends of the groovelike removed part. When laser light strikes near the boundary of the P-type diffusion region 8 of the central part of the chip, it generates heat and a P-type diffusion region 9 is formed. The P-type active region becomes a light guide region, and enables high-output operations. |
| 公开日期 | 1989-09-13 |
| 申请日期 | 1988-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79518]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHOICHI. Semiconductor laser. JP1989230282A. 1989-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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