Semiconductor laser device
文献类型：专利
| 作者 | KURUMADA KATSUHIKO; NAKANO YOSHINORI; FUKUDA MITSUO; TSUZUKI NOBUYORI; MOTOSUGI TSUNEJI |
| 发表日期 | 1988-04-26 |
| 专利号 | JP1988095688A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve performance and yield on manufacture by forming a clad layer in a semiconductor layer consisting of the semiconductor of the same element as an active layer and having a composition ratio at which forbidden band width is made wider than said active layer and narrower than a semiconductor substrate. CONSTITUTION:An active layer 1 is composed of non-doped or p type InGaAsP and has a wavelength of 55mum, an upper-layer first clad layer 2 is made up of p-type InGaAsP, and it is preferable that the wavelength of the upper-layer first clad layer 2 is kept within a range to 0mum from 3mum and layer thickness exceeds 0.4mum. The active layer 1 and the upper-layer first clad layer p-type InGaAsP 2 are grown onto an n-type InP substrate 5 functioning as a lower- layer first clad layer in an epitaxial manner in succession, said double hetero- growth layers are etched by using a normal photolithographic technique, and buried growth layers aiming at the confinement of light waves to the cross direction of the active layer 1 and injected carriers are grown in the epitaxial manner in order of a p-type InP layer 6 and an n-type InP layer 7. |
| 公开日期 | 1988-04-26 |
| 申请日期 | 1986-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79520]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KURUMADA KATSUHIKO,NAKANO YOSHINORI,FUKUDA MITSUO,et al. Semiconductor laser device. JP1988095688A. 1988-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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