Manufacture of semiconductor device
文献类型：专利
| 作者 | TAKAGI NOBUYUKI |
| 发表日期 | 1987-02-28 |
| 专利号 | JP1987047119A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To grow a crystalline layer parallel to a true crystal surface on a crystal substrate even if the crystal surface is displaced by growing a crystal layer on the substrate formed with a projection on the surface, and forming an element on the layer which includes a region on the projection. CONSTITUTION:A projection 2 is formed on a crystal substrate 1 such as an InP substrate. Then, an n-type InP layer 31 as a buffer layer, an n-type In1-xGaxAs layer 32 as a photoreceiving layer and an n-type InP layer 33 as a multiplying layer are sequentially grown by the first liquid-phase epitaxial growth LPE on the substrate In this case, the surfaces of the respective grown layers become parallel to the true crystal surface. Then, a projection is formed on the layer 33. Then, an n type InP layer 34 is grown as guard ring region layer over the projection by the second LPE. In this case, the surface of the layer grown by the first LPE and the surface of the layer grown by the second LPE become in parallel. Then, a P-type region 35 is formed to arrive at the layer 33 by the surface. A photoreceiving device thus formed as above has a region 35 necessary to form a photoreceptor in parallel at the front with the photoreceiving layer, thereby uniformizing the sensitivity distribution in the plane. |
| 公开日期 | 1987-02-28 |
| 申请日期 | 1985-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TAKAGI NOBUYUKI. Manufacture of semiconductor device. JP1987047119A. 1987-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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