Semiconductor light-emitting element
文献类型：专利
| 作者 | KOMATSUBARA TADASHI; SADAMASA TETSUO |
| 发表日期 | 1986-04-15 |
| 专利号 | JP1986073388A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To give even an optical extracting window an effective electrode function, to increase longitudinal currents in currents flowing through a light- emitting layer consisting of a double hetero-junction and to improve luminous efficiency by forming a GaAlAs layer having low resistance and low Al concentration onto the light-emitting layer and using the GaAlAs layer as the optical extracting window. CONSTITUTION:An n-type GaAs layer 22 as a current constriction layer is deposited on a p-type GaAs substrate 21, a p-type GaAs layer 23 is diffused and formed at the central section of the layer 22, and a p-type GaAlAs clad layer 24 constituting a light-emitting layer consisting of a double hetero-junction, a p-type GaAlAs active layer 25, and an n-type GaAlAs clad layer 26 are laminated and grown on the whole surface containing the layer 23. An n-type GaAlAs layer 27, the composition ratio of Al therein is approximately twice as large as the active layer 25 and impurity concentration thereof extends over 1X10/cm or more, is deposited onto the layer 26, an n type GaAs cap layer 28 and an electrode 29 are shaped onto the layer 27, and an optical extracting window 31 is bored to expose one part of the layer 27. An electrode 30 is also provided onto the back of the substrate 2 |
| 公开日期 | 1986-04-15 |
| 申请日期 | 1984-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79527]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KOMATSUBARA TADASHI,SADAMASA TETSUO. Semiconductor light-emitting element. JP1986073388A. 1986-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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