半導体レ-ザの製造方法
文献类型：专利
| 作者 | 今井 敏博 |
| 发表日期 | 1994-08-24 |
| 专利号 | JP1994066512B2 |
| 著作权人 | ソニ-株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザの製造方法 |
| 英文摘要 | PURPOSE:To prevent a junction diode from being short-circuited by a method wherein the exposing part of the active layer of the semiconductor laser on its side surface is protected with an insulating film. CONSTITUTION:An N type stud layer 2, an active layer 3, an N type stud layer 4 and a P type semiconductor layer 5 are formed in order on the surface of an N type wafer-shaped semiconductor substrate 1 consisting of GaAs and the P type semiconductor layer 5 is made in such a way as to have an electri cal insulating property partially. After that, stripped electrode films 8 on the P side are formed on the surface of the semiconductor layer 5. Then, an etching is performed on the surface of the semiconductor layer 5 using the electrode films 8 as masks to form a groove 9 and a scribing (cleavage) is performed to obtain bar-shaped semiconductor substrates 1a. A treatment to coat a protec tive film 13 having an electrical insulating property is performed on both side surfaces of the groove 9, whereon each bar-shaped semiconductor substrate 1a fronts, and both end surfaces of each substrate 1a. After that, a scribing is performed along the groove 9, and a pelletizing is performed to obtain an individual semiconductor laser. |
| 公开日期 | 1994-08-24 |
| 申请日期 | 1984-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79529]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニ-株式会社 |
| 推荐引用方式 GB/T 7714 | 今井 敏博. 半導体レ-ザの製造方法. JP1994066512B2. 1994-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。