Semiconductor light emitting device
文献类型：专利
| 作者 | UDA MASAHITO; OYA AKIRA; OTOSHI SO |
| 发表日期 | 1992-12-15 |
| 专利号 | JP1992363086A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a blue semiconductor laser and to utilize it for a light source, etc., for a high density optical disk by disposing third semiconductor containing composition of Zn (S, Se) interposed to be held between first semiconductor and second semiconductor containing composition of (Cd, Zn)S on a GaAs or ZnSe substrate. CONSTITUTION:An N-doped p-type Zn0.43Cd0.57S clad layer 2 is grown 3mum thick on a p-type GaAs substrate 1 in plane (100), heated to 350 deg.C, then a ZnS0.08 Se0.92 active layer 3 is grown 0.03mum, and an Al-doped n-type Zn0.43Cd0.57S clad layer 4 is grown 1mum thereon. A current narrowing structure is formed by reactive ion etching(RIE) using BF3 as an etchant, insulated by a high resistance SiO2 region 5, an electrode 6 is then formed, and wired 7. When a forward bias DC 4V is applied to this semiconductor element, a blue laser light having 50meV of a half value width at 454nm of a wavelength as a central wavelength is obtained from a cleaved surface at the ambient temperature. |
| 公开日期 | 1992-12-15 |
| 申请日期 | 1991-10-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UDA MASAHITO,OYA AKIRA,OTOSHI SO. Semiconductor light emitting device. JP1992363086A. 1992-12-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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