半導体レ-ザ装置
文献类型：专利
| 作者 | 粂 雅博; 伊藤 国雄; 清水 裕一; 浜田 健 |
| 发表日期 | 1994-01-26 |
| 专利号 | JP1994007638B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To extend the life of a semiconductor laser device remarkably, by providing a region, in which current is not injected, in the vicinity of an end surface, and making an active layer at an end surface part thin. CONSTITUTION:An N-type GaAs layer 2 on a P-type GaAs substrate 1 is provided to block a current. Therefore, the current does not flow in the vicinity of an end surface. In a crystal, a mesa 9 is provided on the GaAs substrate A groove 10, which is provided on the GaAs current blocking layer 2, reaches the mesa 9. The current is injected in an active layer from the groove 10. Ridges 11 of the blocking layer are provided to facilitate the control of the thickness of the active layer in liquid phase epitaxial growing. Namely, the fact that the speed of crystal growing becomes slow on the ridges 11 is utilized in the liquid phase growing. |
| 公开日期 | 1994-01-26 |
| 申请日期 | 1985-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79540]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | 粂 雅博,伊藤 国雄,清水 裕一,等. 半導体レ-ザ装置. JP1994007638B2. 1994-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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