Semiconductor laser
文献类型：专利
| 作者 | MAMINE TAKAYOSHI; YONEYAMA OSAMU |
| 发表日期 | 1984-09-03 |
| 专利号 | JP1984154089A |
| 著作权人 | SONY KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To contrive to improve the astigmatism, threshold current, etc. by increasing or reducing the stripe width S1 and then reducing the width S2, in a planar stripe structure wherein said width is S1 at a distance from an optical end surface and S2 at the optical end surface, and varies gently therebetween. CONSTITUTION:Each semiconductor layer is epitaxially grown on a GaAs substrate For the pattern of the electrode window 7a of an insulation layer 7, the widths S1 and S2 are joined to each other with a tapered part 13. When the distance to the imaginary light source of a light parallel with a junction surface from the optical end surface 12 is D, the curvature radius of the cophasal surface of an emitted light is R, and the half power width of the near field image of light at said surface 12 is W, D becomes maximum at some value of R with W as the parameter; therefore the larger the parameter W, the larger the distance D. Besides, the larger the width S1 almost independently, the larger the radius R, and the larger the width S2, the larger the parameter W. Accordingly, S1 is set large or small with the maximum value as a boundary, and S2 small, R large, and W small, in order to reduce D. Thereby, the threshold current, astigmatism, etc. improve. |
| 公开日期 | 1984-09-03 |
| 申请日期 | 1983-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY KK |
| 推荐引用方式 GB/T 7714 | MAMINE TAKAYOSHI,YONEYAMA OSAMU. Semiconductor laser. JP1984154089A. 1984-09-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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