Semiconductor light emitting device
文献类型：专利
| 作者 | YANO MITSUHIRO |
| 发表日期 | 1987-05-14 |
| 专利号 | JP1987104187A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enable a current flowing through a semiconductor light emitting device to be controlled according to the output thereof for monitoring a semiconductor photo detector having a large transmittance to the emitted light of a light emitting device on the optical path, and allowing a required part of the emitted light to be transmitted and outputted to the outside. CONSTITUTION:Corresponding to the wave range of a semiconductor laser element 1, a photo detector 2 is constructed by growing a buffer layer 22, a InGaAs photo absorption layer 23 and a P-type InP cap layer 24 on, for instance, an N-type InP substrate 21, performing mesa etching, and disposing a P-side electrode 25 and an N-side electrode 26. The N-side electrode 26 of the semiconductor photo detector 2 is bonded to a rod lens 3. One end face of the laser element 1 is a complete reflective surface, and the resonator position of the other light emitting side end face is placed on the optical path of the rod lens 3 at a position on the order of 20-30mum. The laser light is emitted from the surface of the cap layer 24 of the semiconductor photo detector 2 as parallel beams, the semiconductor photo detector 2 absorbs a portion thereof to detect the output generated between the electrodes 25, 26, and controls the bias current of the laser element 1 so as to maintain the output constant, while stabilizing the emitted light. |
| 公开日期 | 1987-05-14 |
| 申请日期 | 1985-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79573]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO. Semiconductor light emitting device. JP1987104187A. 1987-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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