Manufacture of semiconductor laser
文献类型：专利
| 作者 | KANEDA KOICHI |
| 发表日期 | 1991-01-30 |
| 专利号 | JP1991022582A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable the manufacture of semiconductor lasers uniform in characteristics at a high yield by a method wherein a mask layer provided with an opening corresponding to a position where a mesa is formed is laid on a substrate, and a layer of DH structure is epitaxially grown inside the opening to form the mesa. CONSTITUTION:A mask layer 2 of SiO2 or Si3N4 is formed on the whole (100) plane of compound semiconductor substrate of N-type impurity contained InP crystal. Then, a buffer layer 6 of N-type InP, an active layer 7 of non-doped InGaAsP, and a clad layer 8 of P-type InP are selectively, epitaxially grown on the surface of the substrate 1 by the use of an MOCVD device. A mesa is formed as mentioned above, then for instance, the mask layer 2 of SiO is removed using a buffer hydrofluoric acid (HF) solution. Next, a current constriction layer 10 of P-type impurity contained InP is formed on the surface of the compound semiconductor substrate 1 through a liquid phase growth method. Then, a current blocking layer 11 of N-type impurity contained InP is epitaxially grown on the current constriction layer 10 through the same liquid phase growth method as above. |
| 公开日期 | 1991-01-30 |
| 申请日期 | 1989-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79574]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KANEDA KOICHI. Manufacture of semiconductor laser. JP1991022582A. 1991-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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