Semiconductor light-emitting device
文献类型：专利
| 作者 | EBE KOJI; NISHIJIMA YOSHITO; SHINOHARA KOJI |
| 发表日期 | 1987-06-27 |
| 专利号 | JP1987144387A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To improve threshold current density, conversion efficiency and temperature characteristics, etc. by making the difference of the energy levels of electrons and holes in each semiconductor layer having superlattice structure larger than the forbidden band width of an active layer, and performing confinement at least on one active layer of a carrier by superlattice structure. CONSTITUTION:Semiconductor layers 2-6 are grown on a PbTe substrate 1 in succession through a method such as a molecular-beam epitaxy method (an MBE method). Impurity concentration is brought to approximately 2X10cm and thickness to approximately 3mum in the P-type PbTe layer 2, the superlattice structure 3 is formed in a non-doping manner and the whole thickness is brought to approximately 0.3-0.5mum, thickness is brought to approximately 10nm in Pb0.9Sn0.1Te layers 3a, and thickness is brought to approximately 5nm in Pb0.75Sn0.25Te layers 3b. The Pb0.9Sn0.1Te active layer 4 is shaped in a non-doping manner and thickness is brought to approximately 0.5mum, the superlattice structure 5 is constituted similarly in order in which the superlattice structure 3 is inverted, and impurity concentration is brought to approximately 3X10cm and thickness to approximately 2mum in the N-type PbTe layer 6. An electron confinement effect is acquired by the superlattice structure 3, 5, and the confinement effect of holes is obtained by the PbTe layers 2, 6, the upper ends of valence bands thereof are made lower than the Pb0.9Sn0.1Te active layer by approximately 90meV. |
| 公开日期 | 1987-06-27 |
| 申请日期 | 1985-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | EBE KOJI,NISHIJIMA YOSHITO,SHINOHARA KOJI. Semiconductor light-emitting device. JP1987144387A. 1987-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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