Semiconductor laser devices
文献类型：专利
| 作者 | MORI, YOSHIHIRO; OTSUKA, NOBUYUKI |
| 发表日期 | 1994-05-10 |
| 专利号 | US5311534 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser devices |
| 英文摘要 | A semiconductor laser device emits a stable and extremely high optical output. An etching-stop layer is formed at the interface between an active layer and a waveguide layer underlying the active layer, or in a waveguide layer, the layers above the etching-stop layer is processed in a stripe-shaped mesa. Subsequently, a current-blocking layer comprising thin layers of different conductivity type is formed above the etching-stop layer, the thickness of the etching-stop layer being so thin as not to distort the optical intensity distribution of laser light. Alternatively, an active layer and clad layers overlying and underlying the active layer is formed, and a current-blocking layer comprising thin layers of different composition which are alternatively stacked is formed. The conductivity type of the thin layers is reversed at least once during consecutive stacking, and the equivalent refractive index is larger than that of a semiconductor substrate and smaller than that of the mesa. |
| 公开日期 | 1994-05-10 |
| 申请日期 | 1993-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79584]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | MORI, YOSHIHIRO,OTSUKA, NOBUYUKI. Semiconductor laser devices. US5311534. 1994-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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