Semiconductor laser
文献类型：专利
| 作者 | TAKEUCHI YOSHINORI; TAKAMORI AKIRA |
| 发表日期 | 1988-11-28 |
| 专利号 | JP1988289984A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize laser, which oscillates in a single vertical mode, in a simple process and without deterioration in substrate's strength, by providing multilayered films which comprise specific semiconductor layers and forming an inclined terminal plane, to face the semiconductor surface plane, on at least one side out of optical waveguide directional ends of an active layer. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4, and multilayer films 5 formed by laminating semiconductors of n1 and n2 refractive indexes alternately in respective thicknesses of 1/4n1 and 1/4n2, are laminated in order on a semiconductor substrate An inclined terminal plane is formed, to face the semiconductor substrate plane, on at least one side out of optical waveguide directional ends of the active layer 3. For example, an InGaAsP active layer 3 is formed on an InP substrate 1 so that it is interposed between InP clad layers 2 and 4. Semiconductor multilayered films 5 comprising InP and InGaAsP layers, and a cap layer 6 are laminated on the clad layer 4. High reflection multilayer films 9 composed of dielectrics on cleavage planes are formed on one end of the active layer 3, and the inclined terminal plane is formed on the other end so that it faces the substrate surface in an angle thetaof 45 deg. |
| 公开日期 | 1988-11-28 |
| 申请日期 | 1987-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80120]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI YOSHINORI,TAKAMORI AKIRA. Semiconductor laser. JP1988289984A. 1988-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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