Manufacture of semiconductor laser
文献类型：专利
| 作者 | YAMAZAKI SUSUMU |
| 发表日期 | 1990-07-20 |
| 专利号 | JP1990186689A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a distributed feedback diffraction grating from deforming by a method wherein a guide layer formed of a third semiconductor and a diffraction grating deformation preventive layer formed of a second semiconductor whose forbidden bandwidth is the same as that of the third semiconductor are provided onto a first semiconductor substrate to form a diffraction grating. CONSTITUTION:A diffraction grating deformation preventive layer 5 of an InGaAsP layer of specified forbidden bandwidth is formed on an n-InP substrate 1 through a MOCVD method. Then, a diffraction grating of photoresist is formed through a interference exposure method, and a diffraction grating 12 is formed on the n-InP substrate 1 through etching using the above diffraction grating of photoresist. Next, a guide layer 2 of an n-InGaAsP layer, an active layer of an InGaAsP layer, and an upper clad layer 4 of a p-InP layer are successively formed through a MOCVD method. As mentioned above, if a III-V compound semiconductor of four elements is formed on the top faces of the ridges of the diffraction grating 12, the diffraction grating 12 can be effectively prevented from deforming even in a vapor phase growth process, and even if the diffraction grating deformation preventive layer 5 is left unremoved, the diffraction grating 12 does not decrease in feedback efficiency. |
| 公开日期 | 1990-07-20 |
| 申请日期 | 1989-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80122]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAZAKI SUSUMU. Manufacture of semiconductor laser. JP1990186689A. 1990-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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