Semiconductor laser
文献类型：专利
| 作者 | SAKIYAMA HAJIME; TANAKA HARUO; MUSHIGAMI MASAHITO |
| 发表日期 | 1990-08-01 |
| 专利号 | JP1990194683A |
| 著作权人 | ローム株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a forward voltage by a method wherein a lower clad layer, an active layer, a first upper clad layer, a photo absorption layer and an evapo ration preventive layer are laminated, a striped groove to reach the first clad layer is bored and when the groove is covered with a second upper clad layer, the first clad layer is formed into a two layer structure and a dopant identical with that in the first upper clad layer is implanted in the interface of the struc ture. CONSTITUTION:An N-type AlxGa1-xAs (x=0.6) lower clad layer 3, an AlxGa1-xAs (x=0.15) active layer 4, a first upper clad layer 5, an N-type GaAs photo absorp tion layer 6 and an N-type AlxGa1-xAs (x=0.15) evaporation preventive layer 7 are laminated in this order on an N-type GaAs substrate 2. At this time, the surface, which corresponds to a striped groove 9, of the layer 5 is formed into a two layer structure and dopant ions identical with a P-type dopant consti tuting the layer 5 are implanted in an interface part 5a of the structure to keep the carrier concentration in the layer 5 high and a series resistance compo nent small. After that, the surface of this layer 5 is covered with a P-type AlyGa1-yAs second upper clad layer 10 including the groove 9. |
| 公开日期 | 1990-08-01 |
| 申请日期 | 1989-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80126]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ローム株式会社 |
| 推荐引用方式 GB/T 7714 | SAKIYAMA HAJIME,TANAKA HARUO,MUSHIGAMI MASAHITO. Semiconductor laser. JP1990194683A. 1990-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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