Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO |
| 发表日期 | 1989-11-07 |
| 专利号 | JP1989276689A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize the laser oscillation from a low current injection region through a high current injection region by a method wherein an active layer is bent by an AlGaAs growth blocking layer and a GaAs selective growth layer and the active layer is provided between both the end parts of the AlGaAs layer having a small refractive index and, further, end surface window structures made of AlGaAs having a wider forbidden band width than the active layer are provided at the end surface parts of a resonator. CONSTITUTION:A GaAs layer 3 is left on the part of a substrate 1 where an active region necessary for layer oscillation is formed beforehand and an AlGaAs layer 4 is exposed on the remaining parts. As a result, steps are provided between the necessary active region and the other parts. With this constitution, as a light and a current can be efficiency confined only in the laser oscillation region of the active layer, a stable lateral mode oscillation can be realized from a low current injection region through a high current injection region. Further, as a P-type GaAs active layer 5 is bent at the end surface parts of a resonator and replaced by AlGaAs layers having a wide forbidden band width, the end surface breakdown can be avoided. |
| 公开日期 | 1989-11-07 |
| 申请日期 | 1988-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO. Semiconductor laser device. JP1989276689A. 1989-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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