Semiconductor device
文献类型：专利
| 作者 | OE KUNISHIGE |
| 发表日期 | 1987-09-17 |
| 专利号 | JP1987211947A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To effectively prevent the lateral expansion of the light emitted by an active layer by a method wherein a semiconductor laser and a semiconductor element are composed of a plurality of semiconductor layers, and a part of the side face of the clad layer on a laser part is exposed. CONSTITUTION:A heterojunction bipolar transistor 12, consisting of an AlGaAs layer 2, a GaAs layer 3, an AlGaAs layer 4 and a cap layer 5, and a semiconductor laser 15 are formed on a substrate Both end parts on the lower section of a clad layer 13 and the AlGaAs layer 4 of the part adjoining the clad layer 13 are thinly formed, and the greater part of both side faces 13a and 13b of the clad layer 13 is exposed. As a result, the clad layer 13 has the structure wherein it is adjacent to air, and the difference in refractive index of a light- emitting part and its lateral part becomes great. Accordingly, the lateral leakage of light emitted by an active layer 14 can be prevented effectively. |
| 公开日期 | 1987-09-17 |
| 申请日期 | 1986-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80146]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OE KUNISHIGE. Semiconductor device. JP1987211947A. 1987-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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