Manufacture of semiconductor luminescent device
文献类型：专利
| 作者 | OKUDA SHINYA |
| 发表日期 | 1986-03-11 |
| 专利号 | JP1986049489A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor luminescent device |
| 英文摘要 | PURPOSE:To obtain a luminescent device having reduced leakage current, by forming a groove with a V-shaped cross-section in the surface of a semiconductor substrate, and growing a laminated structure consisting of an optical confinement layer having a relatively small forbidden band width and an active layer having a relatively large forbidden band width in the groove and a current constriction layer surrounding the groove in such a manner that the portion of the laminated structure within the groove and the other portion thereof are cut off from each other. CONSTITUTION:A stripe-shaped projection is formed on the surface of an N type InP substrate The area surrounding the projection is covered with a laminated structure consisting of an N type InP layer 2 and an InGaAsP layer 3, and a P type InP layer 4 is grown on the whole surface. A stripe-shaped mask 12 is provided on the layer 4, and etching is carried out to form a groove with a V-shaped cross-section in the center of the projection, the groove reaching the substrate An N type InP optical confinement layer having a relatively small forbidden band width and an InGaAs active layer having a relatively large forbidden band width are laminated on the whole surface by liquid phase epitaxial growth. Thus, an optical confinement layer 5 and an active layer 6 are buried within the groove, and an optical confinement layer 5a and an active layer 6a which are cut off from the layers 5, 6 are formed on the current constriction layer 4 surrounding the groove. Thereafter, a P type InP confinement layer 7, a P type InGaAsP layer 8, and the like are laminated on the whole surface in a conventional manner. |
| 公开日期 | 1986-03-11 |
| 申请日期 | 1984-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80149]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKUDA SHINYA. Manufacture of semiconductor luminescent device. JP1986049489A. 1986-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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