Semiconductor laser array device
文献类型：专利
| 作者 | ITOU KUNIO; WADA MASARU; SHIMIZU YUUICHI |
| 发表日期 | 1986-01-07 |
| 专利号 | JP1986001076A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser array device |
| 英文摘要 | PURPOSE:To obtain a laser array which perform a high output array and equivalent role at the less array light emitting point by asymmetrically distributing the near visual field image when all light emitting points are simultaneously emitted, and providing a sharp peak at the end of the near visual field image. CONSTITUTION:An active region 3 is stepwise of 5mum of pitch, the step of stage is 0.01mum, n type Ga0.7Al0.3As film 2 is accumulated on an n type GaAs film 1 2mum, a Ga0.93Al0.07As film 3 is accumulated 0.2mum to be selectively chemically etched in the prescribed stepwise state, and a p type Ga0.7Al0.3As film 4 is superposed 2mum, and an n type GaAs film 5 is superposed 1mum. A Zn diffused region 7 is formed in the necessary step, and electrodes 9, 10 are attached. The light distribution of the laser array is very strong in the light intensity at the end. Accordingly, when one point on the optical disk is melted, necessary portion is first heated by the light of the maximum light density, the other portion of small light density is then emitted to melt with low output, thereby reducing the output of the entire array, and providing high efficiency. With this construction, low output as the entirety performs effect equivalent to high output array. |
| 公开日期 | 1986-01-07 |
| 申请日期 | 1984-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80160]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | ITOU KUNIO,WADA MASARU,SHIMIZU YUUICHI. Semiconductor laser array device. JP1986001076A. 1986-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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