Semiconductor laser
文献类型：专利
| 作者 | OKUDA SHINYA; USHIJIMA ICHIRO |
| 发表日期 | 1991-04-02 |
| 专利号 | JP1991077391A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the solid-phase diffusion of impurities into an N-type InP clad layer and an InGaAsP active layer from a P-type InP substrate by arranging a P-type InGaAsP impurity diffusion preventing layer between the P-type InP substrate and a P-type InP buffer layer. CONSTITUTION:A P-type InGaAsP impurity diffusion preventing layer 1 is arranged between a P-type InP substrate 31 and an InGaAsP active layer 33. Since the diffusion length of impurities (Zn) in the InGaAsP which composes the P-type InGaAsP impurity diffusion preventing layer 1 is 1/2-1/4 of the diffusion length of impurities in InP which compose a P-type InP buffer layer 32, when a P-type InGaAsP impurity diffusion preventing layer 1 is provided between the P-type InP substrate 31 and the P-type InP buffer layer 32, it provides an effect for preventing impurity diffusion equivalent to that a P-type InP buffer layer 32 having double or three times the thickness of the P-type InGaAsP impurity diffusion preventing layer 1 is provided. Accordingly, the layer lamination can be formed more thinly compared with the case where only the P-type InP buffer layer 32 is arranged on a conventional P-type InP substrate 3 |
| 公开日期 | 1991-04-02 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKUDA SHINYA,USHIJIMA ICHIRO. Semiconductor laser. JP1991077391A. 1991-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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