Method for liquid phase epitaxial growth
文献类型：专利
| 作者 | KASHIWADA YASUTOSHI; KOUNO TOSHIHIRO; AIKI KUNIO; OOUCHI HIROBUMI |
| 发表日期 | 1983-11-15 |
| 专利号 | JP1983196013A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To provide epitaxial growth crystal with little crystal defect, by a method wherein GaAs crystal for preventing supersaturation of As in solution during cooling the solution is contacted to active layer entered in a solution vessel and upper portion of solution for cap layer. CONSTITUTION:Specified amount of solute of Al, n type impurity Te, p type impurity Zn is solved uniformly, and Ga solution to solve As in saturation is prepared at solution vessels 6-9 within H2 vapor of 760 deg.C. Solutions for various layers are entered in growing solution vessels 15-18 through small holes 11-14 provided on a boat part 10. GaAs crystals 19, 20 for preventing supersaturation of As in the solution during cooling are contracted to active layer entered in the vessels 16, 18 and upper portion of solution for cap layer. Temperature of the system is decreased and the solution is transferred, and solution for n-clad in sequence from the vessel 15 is contacted to a substrate crystal 21 thereby epitaxial multi-layer growth is performed at prescribed thickness and composition. |
| 公开日期 | 1983-11-15 |
| 申请日期 | 1982-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80180]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KASHIWADA YASUTOSHI,KOUNO TOSHIHIRO,AIKI KUNIO,et al. Method for liquid phase epitaxial growth. JP1983196013A. 1983-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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