Manufacture of semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; SUYAMA NAOHIRO; YANO MORICHIKA |
| 发表日期 | 1985-03-22 |
| 专利号 | JP1985050983A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser in which a lateral mode is stabilized by forming a striped region at the center of the surface of a semiconductor substrate, burying the recesses of both sides with a different conductive type region from the substrate, and projecting upward the portion contacted with the striped region of the buried region when growing a clad layer and an active layer on the entire surface including the conductive type region. CONSTITUTION:A striped Si3N4 film 20 is provided at the center of the surface of a P type GaAs substrate 1, with this as a mask a substrate 1 is etched, thereby obtaining mesa structure to become a recess. At this time the depth of the mesa structure is set to t1 |
| 公开日期 | 1985-03-22 |
| 申请日期 | 1983-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80188]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,SUYAMA NAOHIRO,et al. Manufacture of semiconductor laser element. JP1985050983A. 1985-03-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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