Semiconductor laser
文献类型：专利
| 作者 | HATA TOSHIO |
| 发表日期 | 1988-02-08 |
| 专利号 | JP1988029990A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the yield and the reliability of a semiconductor laser by providing, between the first clad layer and the active layer, a buffer layer composed of GaAlAs containing an Al amount less than the Al amount of the first clad layer. CONSTITUTION:Between a first P-type GaAlAs clad layer 3 and a P-type GaAs active layer 4, a P-type GaAlAs buffer layer 10 composed of a semiconductor is formed by liquid-phase growth. This P-type GaAlAs buffer layer 10 contains an Al amount less than the Al amount of the P-type GaAlAs clad layer 3, and the relation between the Al amounts of the P-type GaAlAs clad layer 3 and the P-type GaAlAs buffer layer 10 is x>y. Further, the relation between the Al amount of the P-type GaAlyAs buffer layer 10 and the P-type GaAlzAs active layer 4 is y>z. This will prevent oxide from being produced in the boundary surface between the P-type GaAlAs clad layer 3 and the P-type GaAs active layer 4, enabling the yield and the reliability to be improved. |
| 公开日期 | 1988-02-08 |
| 申请日期 | 1986-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HATA TOSHIO. Semiconductor laser. JP1988029990A. 1988-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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