Semiconductor laser
文献类型：专利
| 作者 | KATSUTA HIROHIKO |
| 发表日期 | 1988-07-13 |
| 专利号 | JP1988169087A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To prevent contact between an n-InP current block layer and an n-InP clad layer by arranging the first conductivity type semiconductor substrate where a protruding stripe extending in the light-emitting direction is formed at an upper face center part and the second conductivity type current block layer that is formed at both sides of the protruding stripe on the upper face of the above substrate. CONSTITUTION:A protruding stripe 10a that is long in the direction of optical axis is arranged at an upper face center part of a p-InP substrate 10. And at parts of the upper face of the substrate 10 other than the stripe 10a, an n-InP current block layer 11 is arranged so that the upper face of the layer 11 may attain to the same height as that of the substrate 10 and a p-Inp layer 12 is arranged at the upper faces of current block layer 11 as well as the stripe 10a. Further, an undoped InGaAsP active waveguide layer 15 is arranged slenderly in the direction of optical axis at a position corresponding to the stripe 10a on the upper face of the layer 12. In this way, a width of the active waveguide layer 15 is adjusted by a selective etching process and an p-InP layers 12 and 13 are interposed at an intermediate part between upper and lower parts of an element, its configuration prevents contact between an n-InP clad 16 and the n-InP current block layer 1 |
| 公开日期 | 1988-07-13 |
| 申请日期 | 1987-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80199]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | KATSUTA HIROHIKO. Semiconductor laser. JP1988169087A. 1988-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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