Semiconductor laser element
文献类型：专利
| 作者 | UEDA SADAAKI |
| 发表日期 | 1987-03-11 |
| 专利号 | JP1987055984A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To stably oscillate in a single mode by providing a current narrowing layer on and under an active layer in a semiconductor laser of an inner current narrowing type of double hetero structure. CONSTITUTION:Current narrowing layers 3, 8 are formed through a P-type clad layer 5 and an N-type clad layer 7 on and under the active layer 6 of a semiconductor laser element A current enclosure is effectively performed as compared with the case that 1 layer is formed by the formation of 2 layers to perform a low threshold current. Further, the layers 3, 8 absorb the light, the layer 6 provided substantially large refractive index in the lateral direction to achieve a stable single mode oscillation. |
| 公开日期 | 1987-03-11 |
| 申请日期 | 1985-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80206]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | UEDA SADAAKI. Semiconductor laser element. JP1987055984A. 1987-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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