Manufacture of semiconductor laser
文献类型：专利
| 作者 | WATANABE MINORU; OKAJIMA MASASUE |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283693A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To correctly control width of a ridge and thickness of a clad layer to improve manufacturing yield and device characteristics by forming a stripe ridge by means of selective growth. CONSTITUTION:An n-In0.5(Ga0.3Al0.7)0.5P clad layer 11, an In0.5Ga0.5P active layer 12 and a p-In0.5(Ga0.3Al0.7)0.5P clad layer 13 are formed on an N-GaAs substrate 10. A mask 19 having a stripe opening is formed on the layer 13. A p-In0.5(Ga0.3Al0.7)0.5P layer is selectively grown on an exposed part of the layer 13 to form a stripe p-InGaAlP ridge 14. A p-In0.5Ga0.5P easily-power- supplied layer 15 is formed on it. After the mask is removed, a p-GaAs contact layer 16 is formed. A p-side electrode 17 is formed on the layer 16 while an n-side electrode is formed on the substrate 10 side to obtain HBB semiconductor laser. |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80210]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | WATANABE MINORU,OKAJIMA MASASUE. Manufacture of semiconductor laser. JP1991283693A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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