Semiconductor laser
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1989-10-25 |
| 专利号 | JP1989268085A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser wherein a lateral single wave guiding mode is obtained with good reproducibility, leakage currents in a current blocking layer are less, parasitic capacitance is less and therefore high speed operation is possible at a low threshold value, by providing insulating organic film layers on the right and left sides of an active layer, and providing interface between the insulating organic film layer and a conductive semiconductor layer to the same plane as the lower interface of the active region. CONSTITUTION:Conductive type semiconductor layers 13 and 11 having a refractive index lower than the refractive index of an active region and a forbidden band width larger than the forbidden band width of the active region are arranged at the upper and lower parts of the active region 12 in a semiconductor laser. Semiinsulating organic film layers 17 are provided at the right and left parts of the active region 12. The interface between said insulating organic film layer 17 and said conductive type semiconductor layer 11 is provided at the same plane of the lower interface of the active layer 12. For example, an undoped InGaAsP layer is used for said active layer 12. A zinc doped InP layer is used for the clad layer 13. A zinc doped InGaAsP layer is used for a contact layer 14. Polyimide is used for the insulating organic layer 17. A sulfur doped InP substrate is used for a semiconductor substrate 10. |
| 公开日期 | 1989-10-25 |
| 申请日期 | 1988-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80212]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Semiconductor laser. JP1989268085A. 1989-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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