Manufacture of semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; KOBAYASHI NOBUO; KAMIJO TAKESHI |
| 发表日期 | 1988-12-14 |
| 专利号 | JP1988306685A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To produce a high output and to oscillate a short wavelength in a lateral basic mode by providing an optical guide layer grown in a groove formed on the base of a lower clad layer and its lateral effective refractive index distribution difference, thereby reducing the density of photons. CONSTITUTION:A current constriction layer 2 of an N-type GaAs layer and a stripelike groove 4 are formed on a P-type GaAs substrate A P-type Al0.33 Ga0.67As optical guide layer 5 is grown in a groove 4 to be buried. Then, a P-type Al0.5Ga0.5As lower clad layer 6, an Al0.07Ga0.93As active layer 7, an N-type Al0.5Ga0.5As upper clad layer 8, and an N-type GaAs ohmic contact layer 9 are sequentially formed from below on the layers 2, 5. Then, N-and P-type electrodes 10, 11 are formed at both N-and P-type sides, and a semiconductor laser is formed by a cleaning method. |
| 公开日期 | 1988-12-14 |
| 申请日期 | 1987-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80214]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,KOBAYASHI NOBUO,KAMIJO TAKESHI. Manufacture of semiconductor laser. JP1988306685A. 1988-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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