Manufacture of buried semiconductor laser
文献类型：专利
| 作者 | KONNO KUNIAKI |
| 发表日期 | 1986-05-22 |
| 专利号 | JP1986104687A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried semiconductor laser |
| 英文摘要 | PURPOSE:To keep good characteristics of a buried layer, and to contrive to improve the manufacturing yield by a method wherein the light confinement of the active layer and the current blocking to block flows of current to the region other than the active layer are carried out by surrounding the active layer with a clad layer formation substance. CONSTITUTION:An N-type InP buffer layer 12 and an SiO2 film 13 are successively formed on an N-type InP substrate 11 of plane orientation 100, and a stripe window 14 is opened in this SiO2 film 13 in the O1-1 direction. Next, three layers of an InGaAsP active layer 15, a P-type InP clad layer 16, and a P-type InGaAsP ohmic contact layer 17 are successively grown. After the SiO2 film 13 is etched away, the side surface of the active layer 15 is filled with an InP buried layer 18 by thermal deformation. Thereafter, in the same manner as the normal process, an SiO2 film 19, an Au-Zn ohmic electrode 20, a Cr-Au film 21 as the P-side electrode, and an Au-Ge film as the N-side electrode are formed, thereby completing the title device. |
| 公开日期 | 1986-05-22 |
| 申请日期 | 1984-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80224]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KONNO KUNIAKI. Manufacture of buried semiconductor laser. JP1986104687A. 1986-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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