Manufacture of semiconductor device
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; NISHIJIMA YOSHITO; EBE KOUJI |
| 发表日期 | 1985-08-22 |
| 专利号 | JP1985160622A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To form a miniature pattern with a positive resist used as a mask by carrying out anode oxidation of multi-element compound semiconductor crystal lead.tin.tellurium and lead.tellurium.selenium using oxidation liquid including ethyleneglycol. CONSTITUTION:The lead.tellurium is used as a substrate 1, a lead.tellurium.selenium is formed thereon as a buffer layer 2, next a lead.tin.tellurium is formed as an active layer 3 and moreover a lead.tellurium.selenium is formed as a protection layer 4 respectively by the liquid phase epitaxial growth method. Next, a positive resist is deposited at three points as the resist 5 on the upper surface of the region where a mesa strive is to be formed. The mesa etching is carried out with such resist used as the mask. Next, the positive resist deposited on the upper surface of mesa strive in both sides is removed using the rithography method. Thereafter, with the resist used as the mask, the anodic oxidation is carried out for the other crystal and thereby an insulation film is formed in the thickness of 1,500Angstrom . As the anodic oxidation liquid, the solution obtained by mixing ethyleneglycol, water and oxalic acid in the weight ratio of about 4:1:0.0 |
| 公开日期 | 1985-08-22 |
| 申请日期 | 1984-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/80230]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,NISHIJIMA YOSHITO,et al. Manufacture of semiconductor device. JP1985160622A. 1985-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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